Optically and electrically co-controlled resistance switching in complex oxide heterostructures
نویسندگان
چکیده
منابع مشابه
Complex functional oxide heterostructures
This article presents a review of some salient aspects of a broad class of functional materials, namely complex oxides. These materials, exemplified by the rare earth manganites, superconducting cuprates and more recently multiferroics, are characterized by a complex crystal chemistry, that is central to competing/ cooperating spin, charge, orbital and lattice degrees of freedom. In addition to...
متن کاملUltrafast strain engineering in complex oxide heterostructures.
We report on ultrafast optical experiments in which femtosecond midinfrared radiation is used to excite the lattice of complex oxide heterostructures. By tuning the excitation energy to a vibrational mode of the substrate, a long-lived five-order-of-magnitude increase of the electrical conductivity of NdNiO(3) epitaxial thin films is observed as a structural distortion propagates across the int...
متن کاملGiant photoresistivity and optically controlled switching in self-assembled nanowires
photoresistivity and optically controlled switching in self-assembled nanowires" (2001). Faculty Publications from the Department of Electrical and Computer Engineering. 2.
متن کاملElectro-optically Controlled Switching and Deflection in Domain-Engineered LiNbO3
We report a beam deflection technique that exploits electric-field controlled deflection and total internal reflection at the interface between two anti-parallel domains realized in a single crystal lithium niobate wafer. The LiNbO3 z-cut sample was 500-μm-thick and was photolithographically patterned and poled by means of an applied electric field, in order to realize two adjacent regions of o...
متن کاملOptically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions
Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresista...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2017
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.4986864